November 2007
FDC365P
P-Channel PowerTrench ? MOSFET
-35V, -4.3A, 55m ?
Features
Max r DS(on) = 55m ? at V GS = -10V, I D = -4.2A
Max r DS(on) = 80m ? at V GS = -4.5V, I D = -3.2A
RoHS Compliant
tm
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench ? technology to
deliver low r DS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Applications
Inverter
Power Supplies
S
D
D
1
6
D
D
D
2
5
D
G
Pin 1
D
D
G
3
4
S
SuperSOT TM -6
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-35
±20
Units
V
V
I D
P D
T J , T STG
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
-4.3
-20
1.6
0.8
-55 to +150
A
W
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
156
°C/W
Package Marking and Ordering Information
Device Marking
.365P
Device
FDC365P
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
?2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
1
www.fairchildsemi.com
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